Abstract
Titanium films were deposited on Si 3N 4 ceramic surface by using a pulsed high energy density plasma (PHEDP) gun. The films have been investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The investigation results show that the pulsed plasma energy plays an important role in determining the surface morphology of the film, the deposition rate and the Ti–Si 3N 4 reactions. XRD results show the formation of TiN, Ti 5Si 3 and free Si in the reaction products. The treated Si 3N 4 surface became conductive and the sheet resistance of the film was measured.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
