Abstract
Titanium films were deposited on Si 3N 4 ceramic surface by using a pulsed high energy density plasma (PHEDP) gun. The films have been investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The investigation results show that the pulsed plasma energy plays an important role in determining the surface morphology of the film, the deposition rate and the Ti–Si 3N 4 reactions. XRD results show the formation of TiN, Ti 5Si 3 and free Si in the reaction products. The treated Si 3N 4 surface became conductive and the sheet resistance of the film was measured.
Published Version
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