Abstract

We present a time-dependent calculation of InAs/AlSb/GaSb/AlSb/InAs and InAs/GaSb/InAs resonant interband tunneling structures. We follow the propagation of electron wave packets through the systems and determine the temporal behavior of the device operation by calculating various time scales. We compare these time scales with the lifetime of the corresponding quasi-bound state computed from both the static transmission curve and the exact solution of the quasi-bound state.

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