Equivalent circuit representation for resonant interband tunneling structures

Abstract

Electron wave devices that use quantum-mechanical waves have been actively researched. It is important to understand and to use wave phenomena in potential structures because they are the operational basis of devices. Recently, some circuit-theoretical approaches have been proposed for analyzing and designing wave phenomena in potential structures. In this paper, equivalent circuits based on two- and three-band models that describe wave phenomena in potential structures composed of various semiconductor materials are proposed. By using the proposed equivalent circuits, wave phenomena in resonant interband tunneling (RIT) structures are formulated in terms of equivalent circuits. To confirm the validity of this method, resonant tunneling phenomena are analyzed. Circuit functions and matrices, especially the impedance concept, can be effectively used for analyzing and designing wave phenomena in RIT structures. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(9): 1–10, 1998