Abstract
Films of (Ti,Al)N have been grown onto Si(100) by direct current reactive magnetron sputtering from a Ti–Al alloy target (Ti/Al=90/10 at.-%) at different nitrogen flowrates and bias voltages. The effects of nitrogen flowrate and bias voltage on the electrical resistance of Ti1-x Alx N films were studied. The feasibility of using Ti1-x Alx N films as a diffusion barrier between Cu and Si was investigated. Results indicated that the atomic ratio of Ti/Al decreased, however nitrogen increased with an increase in the nitrogen flowrate. A higher critical nitrogen flowrate was required to obtain the stoichiometric composition for Ti1-x Alx N films deposited under lower bias voltages. The resistivity of Ti1-x Alx N films was substantially affected by the effects of stoichiometric structure and grain size. Results of sheet resistivity and Auger electron spectroscopy suggest the feasibility of using Ti1-x Alx N as a diffusion barrier material between Cu and Si up to 700°C.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call