Investigation of the two-dimensional electron gas in HgCdTe by quantum Hall effect measurements

Abstract

By means of the first observations of the quantum Hall effect in a type II–VI semiconducting compound, Hg1−xCdxTe, we have studied the two-dimensional electron gas formed by the inversion layer of a MISFET (metal–insulator–semiconductor field effect transistor) device. Extensive details regarding the fabrication and use of the MISFET are described. The data also indicate an abrupt onset of the quantum Hall effect which, when interpreted with a percolation threshold theory, is used to further investigate conditions affecting charge transport mechanisms in the two-dimensional electron gas at a HgCdTe interface.