Abstract
The 2D-electron gas (2DEG) carrier density in AlGaAs–GaAs–AlGaAs Schottky-gate quantum well structures prepared by MBE has been determined from capacitance–temperature (C–T) and capacitance–voltage (C–V) characteristics. The achieved results are in remarkable agreement with the values of the 2DEG carrier density determined from simulation, Shubnikov-de Haas oscillations and quantum Hall effect (QHE) measurements.
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