Investigation of the thermal diffusion during the formation of a quasicrystalline phase in thin Al-Pd-Re films

Abstract

The layer mixing during the formation of the Al70Pd20Re10 icosahedral quasicrystalline phase in thin (55 nm) Al-Pd-Re layered film systems subjected to vacuum annealing has been studied. It is shown that a combined layer of Pd and Al atoms (with the Al3Pd2 phase dominating) is formed in the first stage (at 350°C), while the rhenium layer remains invariable. In the second annealing stage (at 450°C), the β′-AlPd phase is formed and the Re layer is diffused. In the third stage (700°C), Pd and Re atoms are uniformly distributed throughout the film with the formation of a quasicrystalline phase.