Abstract
Unintentionally doped p-type Ga 2Te 3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman–Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140–300 K). The current–voltage ( I – V ) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model.
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