Abstract
Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman–Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140–300 K). The current–voltage (I–V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model.
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