Abstract
AbstractThe morphological and structural transition of Cu2SnS3 (CTS) thin films during sulfurization was investigated. The surface morphology and re‐evaporation of CTS films strongly depend on the sulfurization temperature. Low temperature sulfurization enables the films to be sulfurized and form CTS without re‐evaporation. Subsequently, the high‐temperature annealing improves the grain size of the CTS film. In addition, the energy band diagrams of the CTS‐related solar cell structures that use various n‐ type oxide semiconductors, such as CdS, ZnO:In2O3(IZO), ZnO, SnO2, and ZnO:SnO2(ZTO) were examined by photoelectron yield spectroscopy. The band diagrams of IZO/CTS, ZnO/CTS, SnO2/CTS, and ZTO/CTS have a TYPE‐I heterostructure known as a “spike” conduction band offset structure, essential for high‐efficiency solar cells. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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