Abstract
The statistical variability of the static noise margin of a six-transistor bulk complementary metal-oxide-semiconductor static random access memory (SRAM) cell due to random doping fluctuations (RDFs) is investigated via 3-D technology computer-aided design simulations. The SRAM cell is created through 3-D process simulations of the entire cell as a single structure. The process flow is based on a typical 32-nm technology. The effects of RDFs on the cell performance are investigated using the highly efficient statistical impedance field method.
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