Abstract
Based on the rate equation model of semiconductor lasers, the radiative efficiency and threshold current density of InGaN-based blue laser diodes (LDs) are theoretically investigated, including the effect of efficiency droop in the InGaN quantum wells. The peak point of the radiative efficiency versus current density relation is used as the parameter of the rate equation analysis. The threshold current density of InGaN blue LDs is found to depend strongly on the maximum radiative efficiency at low current density, implying that improving the maximum efficiency is important to maintain a high radiative efficiency at a large current density and to achieve a low-threshold lasing action under the influence of efficiency droop.
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