Abstract
The radiation performance of a Hamamatsu S5466 and an EEV CCD02-06 silicon CCD sensors, working in a Multi-Pinned Phase (MPP) mode has been evaluated, in view of their possible use in the vertex detector of a future linear collider. We have examined the influence of the electron irradiation from a β-source with fluencies up to 4.3×10 12 e −/ cm 2 on the parameters of the CCD sensors such as dark current, dark current spikes, drive pulse voltages and charge transfer inefficiency (CTI). The changes of the parameters of the devices resulting from the irradiation are reported and discussed.
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