Abstract

Hydrogenatedcarbon films (a-C:H) were deposited on single-crystal Ge with ion beams by means of a linear anode layer ion source at a flow rate of C3H8 of 1.7–4.4 sccm. An intermediate layer formed by the ion beam with an energy of 3 keV increases the adhesion of the coatings to the substrate and increases the hardness of the coatings. The highest hardness obtained with the use of the intermediate layer was 19±1.9 GPa. The transmission of the germanium substrate coated with a single layer of the a-C:H coating reaches 65–67% at wavelengths of 4.5–6 µm.

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