Abstract
A two-dimensional distribution function in the frequency range 0.03–1 Hz was used to investigate the statistical characteristics of the fluctuations of the field emission current from single crystals of tungsten and p-type silicon. In order to determine the type of nonlinearity predominating in the low-frequency noise of the emission current, calculations were made of the two-dimensional distribution function for a Gaussian random process subjected to a given type of nonlinear transformation and the profiles of the experimental two-dimensional distribution functions were compared with dependences obtained by numerical methods. It was established that fluctuations of the effective emitting surface of the cathode, the barrier transmission, the work function, and of the electric field strength near the emitter surface may act as primary sources of low-frequency noise in the field emission current.
Published Version
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