Abstract
Epitaxial BaTiO3 (BTO) films were deposited on (La0.5Sr0.5)CoO3 buffered (001)-oriented YAlO3, LaAlO3, (La0.5Sr0.5)(Al0.5Ta0.5)O3, and SrTiO3 single-crystal substrates using radio-frequency magnetron sputtering. XRD analyses identified that the actual in-plane misfit strains are an order of magnitude less than the unrelaxed lattice misfit (the relaxation of the film/substrate internal stresses). The dielectric properties, polarization and leakage current performances all exhibit slightly the substrate-dependent behavior, which can be mainly attributed to the difference of the film/electrode interface-state parameters. A modified Schottky model was employed to describe the leakage current behaviors. Large space-charge densities calculated with this theory achieved on the order of 1019cm−3 for all BTO films, which will significantly contribute to shrinking and tilting of our P-V loops. One possible potential application for ferroelectric films with such characteristic is to provide high storage density of capacitive energy.
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