Investigation of the electrical properties of diodes by crosschecking dependence on the presence of (nanocarbon-PVP) interface layer

Abstract

The Al/p-Si (metal-semiconductor (MS)) and Al/nanocarbon-PVP/p-Si (metal-polymer-semiconductor) type Schottky barrier diodes (SBDs) were fabricated in same conditions to determine the existence of an increase in the performance of Al/p-Si diode and they were called as D1 and D2, respectively. For this purpose, the electrical properties of the diodes were investigated using the current–voltage and impedance–voltage measurements in wide bias voltage. The ideality factor, reverse-saturation current and zero-bias barrier height values were calculated from the linear part of the forward bias lnI–V plot as 6.23, 2.35 ✕ 10–8A, 0.68 eV for D1 and 2.86, 4.27 ✕ 10–9A, 0.73 eV for D2, respectively. It is seen from results that the value of rectifier rate for D2 is about 8 times higher than for D1. The values of barrier height, Fermi energy level, the number of doped acceptor atoms and depletion layer width were obtained. The values of series resistance and special density distribution of interface states’ values also considerably decrease using (nanocarbon Polyvinylpyrrolidone (PVP)) interlayer. All these results confirmed that the nanocarbon-PVP polymer interlayer leads to a seriously increase in the performance of the MS diodes and hence it can be successfully used as an insulator in view of low cost, grown by simple methods.