Abstract
In this study, amorphous HfInZnO (a-HIZO) thin films and related thin-film transistors (TFTs) were fabricated using the RF-sputtering method. The effects of the sputtering power (50–200 W) on the structural, surface, electrical, and optical properties of the a-HIZO films and the performance and NBIS stability of the a-HIZO TFTs were investigated. The films’ Ne increased and resistivity decreased as the sputtering power increased. The 100 W deposited a-HIZO film exhibited good optical and electrical properties compared with other sputtering powers. Optimization of the 100 W deposited a-HIZO TFT demonstrated good device performance, including a desirable μFE of 19.5 cm2/Vs, low SS of 0.32 V/decade, low Vth of 0.8 V, and high Ion/Ioff of 107, respectively. The 100 W deposited a-HIZO TFT with Al2O3 PVL also exhibited the best stability, with small Vth shifts of -2.2 V during NBIS testing. These high-performance a-HIZO thin films and TFTs with Al2O3 PVL have practical applications in thin-film electronics.
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