Abstract
We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V−1 s−1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.
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