Abstract
In this study, Sn (tin) doped ZnS (zinc sulphide) films have been deposited on the p-type Si (silicon) crystal substrates by the sol-gel dipping technique. The effect of Sn doping in ZnS on diode parameters has been studied via capacitance-voltage (C–V) and conductance-voltage (G/ω-V) measurements in the frequency range of 10 kHz - 1.5 MHz at room temperature. Fermi energy level (EF), carrier concentration (NA), the density of interface states (Nss), barrier heights (ΦB), and built-in potential (Vbi) of the diodes have been obtained by C–V characteristics. Series resistance (Rs) values of diodes have been determined for different frequencies via C–V and G/ω-V measurements.
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