Abstract
In this paper, the effect of low energy irradiation on mono-layer graphene was studied. Mono-layer graphene films were irradiated with B, N and F ions at different energy and fluence. X-ray photoelectron spectroscopy indicates that foreign ions implanted at ion energies below 35 eV could dope into the graphene lattice and form new chemical bonds with carbon atoms. The results of Raman measurement indicate that ion beam irradiation causes defects and disorder to the graphene crystal structure, and the level of defects increases with increasing of ion energy and fluence. Surface morphology images also prove that ion beam irradiation creates damages to graphene film. The experiment results suggest that low-energy irradiation with energies of about 30 eV and fluences up to 5·1014 cm−2 could realize small amount of doping, while introducing weak damage to graphene. Low energy ion beam irradiation, provides a promising approach for controlled doping of graphene.
Highlights
1 × 1014 2 × 1015 1 × 1014 6 × 1015 1 × 1014 2 × 1015 an atomically thin target, graphene has a significantly different response to ion beam irradiation as compared to traditional three-dimensional materials.[26]
X-ray photoelectron spectroscopy indicates that foreign ions implanted at ion energies below 35 eV could dope into the graphene lattice and form new chemical bonds with carbon atoms
Graphene samples are obtained from Graphene-Supermarket,[30] mono-layer graphene is grown via Chemical Vapor Deposition (CVD) processing on a copper foil and transferred to a silicon wafer covered with a SiO2 layer
Summary
1 × 1014 2 × 1015 1 × 1014 6 × 1015 1 × 1014 2 × 1015 an atomically thin target, graphene has a significantly different response to ion beam irradiation as compared to traditional three-dimensional materials.[26] the study on effects of ion beam irradiation on mono-layer graphene is of particular importance. Some experimental studies of ion beam irradiation on graphene has been reported,[27,28,29] most of them use very high energy ion beam (30 KeV). Due to high irradiation energy, great damages will be introduced and very few if any ions were directly incorporated to the graphene sheet. Upon this reason, in this paper we investigated the effects of low ion energy (lower than 50 eV) irradiation on graphene
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
