Investigation of the dynamic parameters of electroluminescence in different parts of the spectrum in local regions of the light-emitting heterostructure

Abstract

A method for measuring the distribution of the differential charge carriers lifetime over energy levels in the local regions of a light-emitting heterostructure is presented. The method has been tested on commercial green InGaN-based LEDs. It has been determined that with an increase in the energy level (with decreasing wavelength), the charge carriers lifetime decreases. It is shown that the relative inhomogeneity of the distribution of the charge carriers lifetimes in local regions of the die in the long-wavelength part of the electroluminescence spectrum is higher than in the short-wavelength part of the spectrum.