Abstract
The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a-plane (11 $$\bar {2}$$ 0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric {11 $$\bar {2}$$ 4} and {10 $$\bar {1}$$ 5} reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for GaN(0001)/Al2O3(11 $$\bar {2}$$ 0) layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.
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