Abstract
The direct growth of m-plane GaN via metal–organic vapor phase epitaxy has been demonstrated using a deep-groove-patterned a-plane sapphire substrate with a c-plane sidewall and terrace covered with a SiO2 mask. The GaN layer was laterally grown from the etched c-plane sidewall in the a-plane sapphire substrate, which means c-direction growth of GaN. According to the epitaxial relationship which m-axis of GaN layer corresponds to a-axis of c-plane sapphire when using a low-temperature buffer layer, m-plane GaN was grown with an epitaxial lateral overgrowth from the c-plane sidewall of the a-plane sapphire.
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