Abstract
The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on-insulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">id</sub> ) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</i> 0 as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gm</i> significantly decreases as temperature increases, their minimum noise figure NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> and equivalent noise resistance <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Rn</i> would degrade with increasing temperature.
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