Abstract
The influence of 100 MeV Ag 7 + ion irradiation on current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics of Au/CdTe and Au / Cd 0.9 Zn 0.1 Te Schottky barrier diodes as a function of fluence are investigated. The irradiation fluence was varied from 1 × 10 10 to 1 × 10 13 ions cm - 2 . The current transport across the metal–semiconductor junction for pure and irradiated Schottky barrier diodes has been described by the thermionic-field emission process. Also, there are several mechanisms such as barrier tunneling, carrier compensation and generation–recombination mechanism, which may account for the I – V and C – V characteristics after irradiation. This variation in various diode parameters such as ideality factor ( n ) , Schottky barrier height ( Φ b ) and saturation current ( I s ) has been studied as a function of irradiation fluence. The energy loss mechanism of swift heavy ions at the metal–semiconductor interface is used to explain the change in Schottky barrier diode parameters. The observed modification at interface states of Schottky barrier height over a wide fluence range are mainly due to intense electronic energy loss mechanism and latent ion track formation created by swift heavy ions.
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