Abstract
A spatially and time-resolved free carrier absorption method is applied to quantify surface recombination losses as compared to the bulk in 4H- and 6H-SiC structures. The observed carrier lifetime variation is discussed in terms of crystalline quality, top-surface properties and junction effects at the epilayer-substrate interface. Surface recombination parameters in epilayers with differently processed surfaces are extracted from fitting experimental data with numerical simulations. The as-grown bare epilayer is characterized by 10 4 cm s −1 surface recombination velocity. Mechanical polishing increases this parameter to 5×10 5 cm s −1. No noticeable passivation of 6H-SiC surface by an oxide film is observed, whereas an increase of the surface recombination velocity up to 10 5 cm s −1 has been detected after dry oxidation of 4H-SiC.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
