Abstract
Complete filling of 0.13-µm vias and deposition of Cu with a low resistivity of about 2.3 µΩ·cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400°C for 30 s, the resistivity was further reduced to ∼1.9 µΩ·cm.
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