Abstract
In this paper, for the first time, the performance evaluation of negative capacitance single-active layer double-gate (NC-SALDG) TFT is presented. In the proposed NC-SALDG TFT, amorphous InGaZnO material is used as an active layer owing to its enhanced carrier mobility and improved optical transmittance properties. By coupling the TCAD numerical simulation with 1D Landau-Khalatnikov (LK) equation, a semi-analytical model of NC-SALDG TFT is developed. The subthreshold characteristics of NC-SALDG TFT are analyzed by varying the thickness of aluminum (Al) doped HfO2 and different ferroelectric materials. Further, high ON current, low OFF current, and better minimum & average subthreshold swing of NC-SALDG TFT are observed for Al-doped HfO2 material compared to its counterparts. From the result analysis, the proposed NC-SALDG TFT shows superior subthreshold performance over conventional SALDG TFT. The baseline SALDG TFT was simulated with 2D TCAD simulator Atlas™ from Silvaco.
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