Abstract
Transparent conductive Al-doped ZnO (AZO) thin films used as transparent conductive oxide (TCO) electrode layers for thin film solar cells were deposited on quartz substrate by radio frequency (RF) magnetron sputtering. After deposition, the samples were annealed at various temperatures. The structural, electrical, and optical properties of these films have been analyzed as a function of the annealing temperature. All of these samples exhibit strong (002) diffraction peaks and the average transmittance in visible range is about 85%. The crystallinity of films together with some changes of the electrical resistance has been improved after thermal annealing. The best characteristics have been obtained at 400 °C, where the lowest resistivity is 2.4×10-3 Ω cm and the optical band gap is 3.22 eV.
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