Abstract
The focus of this research is on the investigation of structural changes in the As2S3–Se multilayer nanostructure and on the examination of a relative contribution of As2S3 and Se layers to nanostructuring by measuring the Raman spectra. The formation of the As2S3-Se nanostructure by an alternate As2S3 and Se layers deposition was applied. The diffraction efficiency dependence on the exposure of a CW DPSS laser were monitored in a transmission mode of the1st order diffracted beam intensity and measured in real-time at the normal incidence of the laser diode beam (λ = 650 nm). From the comparison of these dependences for a set of samples we have chosen the multilayer nanostructure As2S3–Se with optimal recording properties meaning maximum both the value and the rate of diffraction efficiency. Our results are found to be of practical interest as they allow a significant improvement of the diffraction efficiency of the directly recorded relief gratings.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
