Direct surface patterning of homogeneous and nanostructured chalcogenide layers

Abstract

AbstractInvestigations of direct one‐step optical recording of surface optical and geometrical patterns in homogeneous and nanostructured chalcogenide layers were extended towards e‐beam recording. Our aim was to establish the common features of the two processes, and to develop some optimum materials for prototypic micro‐ and nanosized elements for optoelectronics. Experiments were conducted on Se/As2S3 and Sb/As2S3 nanolayered structures (NLS) as well as on uniform Se, Sb and As2S3 layers. Both green laser light (λ = 535 nm) and e‐beam (5‐20 pA, 10‐30 keV) induced bleaching in all NLS. The optical change was more efficient in Sb‐containing NLS. In contrast, volume expansion occurred only in chalcogenide‐chalcogenide NLS and the homogeneous Se or As2S3 layers. Its magnitude was larger for the NLS (Δd /d ≥10%); no volume change was detected in Sb layer. A comparison of the two types of recording revealed the role of interdiffusion and induced free volume aggregation in a giant relief formation under the increased fluidity conditions. It was shown that these effects could be used to fabricate micro lenses, amplitude‐phase optical modulating and guiding elements. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)