Investigation of spurious mode suppression in 3.8 GHz shear-horizontal mode surface acoustic wave resonators based on LiNbO3/SiO2/Si multilayer structure

Abstract

LiNbO3(LN)/SiO2/Si multilayer structures have recently attracted much attention due to their superior performance in realizing wideband radio-frequency acoustic filters. However, the spurious modes, which are commonly found in LN-on-insulator (LNOI) resonators, often cause in-band ripples and a deteriorated out-of-band suppression level. Although much research work has been done on the suppression of spurious modes in LNOI resonators operating in the <3 GHz region, little has been reported for >3 GHz devices. This work investigates the spurious mode suppression techniques for a 3.8 GHz shear-horizontal mode 36° YX-LNOI surface acoustic wave (SAW) device based on an LN/SiO2/Si multilayer structure. Specifically, we explore different techniques based on apodized electrodes, dummy electrodes and a double busbar structure. The measured results show that the effect of spurious mode suppression can be improved by combining the benefits of these techniques, which provides a promising solution for designing spurious-free LNOI SAW resonators operating above 3 GHz.