Investigation of spin lifetime in strained InxGa1−xAs channels through all-electrical spin injection and detection

Abstract

We investigated the spin-dependent transport properties of strained InxGa1−xAs (x = 0.04, 0.07, and 0.16) channels grown on GaAs substrates by observing the spin-valve and Hanle signals in a lateral spin-transport device with an Fe spin source. The spin lifetime in the strained InxGa1−xAs channels estimated according to Hanle signals was one order of magnitude smaller than that in GaAs channels, and the spin lifetime depended on the degree of strain induced in the InxGa1−xAs layer. These results are explained by the strain-induced spin–orbit interaction.