Abstract
Ion microbeam, of either 2.5 μm or 20 μm diameter, have been used to investigate single event soft upsets in MOS memory microcircuits. Specifically, to demonstrate the usefulness of the technique, the larger beam was first used to study the energy dependence of the upset rate of 16K dynamic random access memories for 4He ions in the range from 1.9 to 2.9 MeV and to study the upset sensitivities of various parts of the microcircuit. The smaller diameter beam was used to localize the sensitive microcircuit parts still further. It was found that sense amplifiers appeared to be more sensitive to upsets by 3 MeV 4He impacts than cells or bit lines. It was also found that bit lines can transmit electrical disturbances caused by 4He impacts.
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