Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications

Abstract

Silicon carbide (SiC) doped Sb3Te materials have been investigated for realizing high speed blending with admirable endurance and excellent stability in phase-change applications. (SiC)0.85-Sb3Te alloy is considered to be a potential candidate in view of its high crystallization temperature (199.6°C) and a good data retention ability (118.5°C for 10 years). The prominent advantages can be seen in comparison with those of pure Sb3Te and Ge2Sb2Te5. Moreover, phase change memory cell based on (SiC)0.85-Sb3Te achieves ultrafast reversible operation (5ns) and good endurance (3.9×104 cycles) easily due to dopants' uniform distribution and a key role in grain refinement.