Abstract
Silicon carbide (SiC) doped Sb3Te materials have been investigated for realizing high speed blending with admirable endurance and excellent stability in phase-change applications. (SiC)0.85-Sb3Te alloy is considered to be a potential candidate in view of its high crystallization temperature (199.6°C) and a good data retention ability (118.5°C for 10 years). The prominent advantages can be seen in comparison with those of pure Sb3Te and Ge2Sb2Te5. Moreover, phase change memory cell based on (SiC)0.85-Sb3Te achieves ultrafast reversible operation (5ns) and good endurance (3.9×104 cycles) easily due to dopants' uniform distribution and a key role in grain refinement.
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