Abstract
AbstractSi nanowires are of interest for photovoltaics and sensors. We report about the growth of Si nanowires from SiH4 using a Au catalyzed vapor‐liquid‐solid (VLS) growth process in a tube furnace at atmospheric pressure. At elevated growth temperatures, single crystalline wires with clear facets are obtained. The influence of the furnace temperature and the Au layer thickness on the nanowire growth is investigated in detail. The orientation of the wires has been studied by EBSD. For electrical characterization, Pt metal contacts have been applied to individual wires using Pt deposition in a FIB microscope. The high values found for the conductivity indicate that Ga implantation occurs during the FIB process. Electrical characterization under illumination shows the presence of a significant photoconductivity. Further functionalization of the Si nanowires will be done by combining them with luminescent nanoparticles (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
