Abstract
InGaAs/AlAs quantum wells on GaAs substrates were studied for near-infrared intersubband transitions. The relationships between the properties of the intersubband absorption and the structural/growth conditions of the quantum wells were quantitatively investigated by using theoretical calculations based on a k-p perturbation method. The total intersubband absorption magnitude is shown to be closely related to the leakage of free carriers from the Γ minimum of the well to the X minimum of the barrier. This work provides important information for design of devices utilizing short wavelength intersubband transitions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
