Investigation of Short Channel Effects in SOI MOSFET with 20 nm Channel Length by a β-Ga2O3 Layer

Abstract

This paper presented a fully depleted silicon on insulator (FD-SOI) MOSFET in nano scale size with deployment the quasi two dimensional β-Ga2O3 material to improvement electrical properties. The main idea of the proposed structure is embedding a layer of the β-Ga2O3 in the drain region. Due to the β-Ga2O3 material features, the electric field distribution near the drain and gate side will be change and peak of the electric field of the proposed structure is diminish. The embedded layer of the β-Ga2O3 material in our work has an important effects on the electrical and thermal characteristics. In this paper, characteristics of the proposed structure is compared with the prevalent SOI and improvement of characteristics in our work are shown. The features such as the electric field, the potential distribution, the sub-threshold slope, the kink effect, the self-heating effect, punch through effect and DIBL effect are investigated and compared with prevalent SOI.