Abstract
The third-order nonlinear optical properties in wurtzite InGaN/GaN pyramid and truncated-pyramid quantum dots are studied, and the oscillator strength, third-order nonlinear optical susceptibility and self-focusing effects are analyzed theoretically taken into account the strong built-in electric field effect due to the piezoelectric and spontaneous polarization in nitride materials. The numerical results clearly show that the quantum dot (QD) size of InGaN/GaN have a significant influence on the nonlinear optical properties of wurtzite InGaN/GaN quantum dots. Furthermore, the self-focusing effect increases with decrease in size of QDs.
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