Investigation of Self‐Heating Effect in Inverters: Structural Design and Optimization Design of 14 nm Silicon‐on‐Insulator Fin Field‐Effect Transistor

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In this research, the characterization of the self‐heating effect of rectangular fin angle (RF‐SOI) Fin field‐effect transistor (FinFET) and trapezoidal fin angle (TF‐SOI) FinFET at different sensitive structural parameters and varying ambient temperatures. The results indicate that with studies based on self‐thermal effect, TF‐SOI FinFET have lower lattice temperatures and higher thermal resistance compared to RF‐SOI FinFET, along with higher threshold voltages, lower off‐state currents, and lower subthreshold swings. In inverter circuits, TF‐SOI FinFET‐based inverters exhibit smaller delays and more stable performance. It is also found that the self‐heating (SH) effect increases the propagation delay for both inverters, TF‐SOI FinFET‐based inverters with a propagation delay increase of ≈2% more than RF‐SOI FinFET‐based inverters. These findings indicate the trapezoidal fin structure's potential for enhanced thermal management and device performance in advanced SOI FinFET technologies.