Abstract
Se-doped GaSb epilayers grown by low-pressure MOCVD were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. Layers of high quality can be obtained. The carrier concentrations of epilayers were greatly influenced by the flow rates of H 2Se and V/III mole fraction. The carrier concentration versus these parameters can be well explained. The carrier concentration and the H 2Se mole fraction can be expressed as n ∝[H 2Se] 1.3. Varying the V/III ratio affects the electrical properties of Pd/ n-GaSb Schottky diodes. The Se effects can be explained with a simple model.
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