Abstract
Zinc-doped GaAs epilayers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) are studied. Triethylgallium (TEG) and arsine (AsH3) are used as Ga and As source, respectively. Diethylzinc (DEZ) is used as p-type dopant. Layers of high crystalline quality can be obtained. The influence of growth parameters such as DEZ mole fraction, growth temperatures and AsH3 mole fraction on hole concentration are measured and discussed. These results can be explained well by a simple qualitative model. The hole concentration is proportional to the concentration of gallium vacancies. The I–V characteristics of Schottky diodes and p-n junctions are discussed. The ideality factor is about 1.3.
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