Abstract
Fe-doped semi-insulating InP layers have been successfully grown in a vertical flow, low pressure metalorganic chemical vapor deposition (LPMOCVD) system, and used as current blocking layers in buried crescent (BC) laser structures emitting at 1.51 µm. Triethylindium ((C2H2)3In), phosphine (PH3) and iron pentacarbonyl (Fe(CO)5) were used as the reactant gases. Process variables have been identified which produce high resistivity (107 to 108 Ω-cm) InP having featureless surface morphology, and layer thickness and doping uniformity. There is optical and x-ray diffraction evidence for the presence of an unidentified In-Fe-P second phase associated with markedly degraded surface morphology under nonoptimized growth conditions. Early BC lasers incorporating LPMOCVD grown, Fe-doped InP blocking layers have operated CW with threshold currents as low as 12 m A and optical output > 18 mW.
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