Investigation of Readout Cell Configuration and Parameters on Functionality and Stability of Bi-Directional RSFQ TFF

Abstract

Considering the two main categories of rapid single flux quantum gates with destructive and nondestructive readout process, we have investigated the effects of readout cell topology and involved critical parameters on the proper functionality and stability of the states of the newly developed bidirectional T flip-flops (TFFs). It is observed that instabilities and fluctuations in the state of the gate (memory of TFF) after each transition determine the minimum time intervals between the clock pulses set by the ac bias current, further limiting the ultimate operation frequency of the circuits. The absolute values of the current levels of the junctions at each state, which play an important role in the behavior of the cell, are studied, and their variations over several consequent pulses are stabilized by optimizing the cell parameters. The appropriate values of the circuit and junction parameters are found, resulting in the optimum operation of the circuit for having the best margins possible. We report on the investigated circuit topology and parameter optimizations of the readout circuit of the considered bidirectional TFF.