Abstract
The performance of Cu(In,Ga)Se 2 (CIGS) solar cells has been modeled and numerically simulated with the emphasis on the effects of junction properties by using the AMPS-1D device simulation tool. The impacts of the inverted surface defect layers or the Cd-doped interface layers on the performance of CIGS solar cells are examined. The device physics and performance parameters of the CIGS solar cells with different junction parameters are analyzed. The results suggest that the open-circuit voltage and fill factor of CIGS solar cells are improved by diminishing the recombination around the junction region, due to the surface band gap widening with a valence band offset and the high Cd doping concentration around the interface.
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