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Abstract
AbstractThe angular distributions of (1.87 to 5.7) MeV electrons channeled in 2 μm Si crystals along (100), (110), and (111) atomic planes are measured. The half‐width of measured angular distributions is defined by a critical Lindhard angle. A relation is obtained connecting those energies of electrons at which their angular distributions are similar for various atomic planes. The effect of a “critical energy” under planar channeling of electrons is found and investigated.
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