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Abstract
AbstractA detailed treatment in the classical and quantum‐mechanical approximations of the bound motion of energetic electrons with (011) atomic planes of Si is given. For electrons with energies up to 2.5 MeV only a few resolved quantized states are obtained. The angular distributions of electrons in the ground and exited states are calculated and compared with experimental data. It is shown that electrons are effectively channeled through the crystal along the atomic planes, thereby being mainly in an excited state.
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