Abstract
ZnO is considered to be the most promising material to replace ITO. Therefore, there are many studies on ZnO at present. In this paper, the electrical and optical properties of ZnO film as transparent electrode are investigated, and the process parameters in this field are explored. ZnO films and MgxZn1-xO filmswere prepared on glass substrates by sol-gel spin coating method. X-ray diffractometer (XRD), field emission scanning electron microscope (SEM), ultraviolet-visible spectrophotometer (UV–vis) and four-probe experiment were used to characterize the films. The results show that the ZnO film gets the best comprehensive performance when the number of spin coating is 5 times and the annealing temperature is 500 °C. And the resistivity of the film decreases with the increase of Mg doping concentration. This work is the practical application research of ZnO, which is very important and meaningful.
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