Abstract
A modified conventional RF sputtering equipment is used in preparing the Al2O3 antireflection (AR) coating. An increase in the light output by 30–60% at a driving current of 200 mA for the GaAs-GaAlAs DH LEDs coated on the front faces with a AR coating thickness of about λ/4 has been obtained. Under the same AR coating conditions a light output increase of less than 30% for the degraded LEDs of the same type has been determined. It may probably be attributed to the defects formed in the bulk of the Ga1−xAlxAs crystals caused by degradation of diodes which restricts light output increase.
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